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IXGP12N100

IGBT 1000V 24A 100W TO220AB


  • Manufacturer: IXYS
  • Origchip NO: 401-IXGP12N100
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 335
  • Description: IGBT 1000V 24A 100W TO220AB (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*12N100
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 100W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.5V
Max Collector Current 24A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 1kV
Voltage - Collector Emitter Breakdown (Max) 1000V
Turn On Time 100 ns
Test Condition 800V, 12A, 120 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 12A
Turn Off Time-Nom (toff) 900 ns
Gate Charge 65nC
Current - Collector Pulsed (Icm) 48A
Td (on/off) @ 25°C 100ns/850ns
Switching Energy 2.5mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 700ns
RoHS Status ROHS3 Compliant
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature HIGH SPEED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 100W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
See Relate Datesheet