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IXGR40N60B2D1

IXYS SEMICONDUCTOR IXGR40N60B2D1 IGBT Single Transistor, Isolated, 60 A, 1.9 V, 167 W, 600 V, TO-247AD, 3 Pins


  • Manufacturer: IXYS
  • Origchip NO: 401-IXGR40N60B2D1
  • Package: ISOPLUS247™
  • Datasheet: PDF
  • Stock: 287
  • Description: IXYS SEMICONDUCTOR IXGR40N60B2D1 IGBT Single Transistor, Isolated, 60 A, 1.9 V, 167 W, 600 V, TO-247AD, 3 Pins (Kg)

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Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS247™
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series HiPerFAST™
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Power Dissipation 167W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*40N60
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 167W
Case Connection ISOLATED
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 82ns
Collector Emitter Voltage (VCEO) 1.9V
Max Collector Current 60A
Reverse Recovery Time 25 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.9V
Turn On Time 38 ns
Test Condition 400V, 30A, 3.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 30A
Turn Off Time-Nom (toff) 390 ns
IGBT Type PT
Gate Charge 100nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 18ns/130ns
Switching Energy 400μJ (off)
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet