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IXGT15N120B

Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(2+Tab) TO-268


  • Manufacturer: IXYS
  • Origchip NO: 401-IXGT15N120B
  • Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Datasheet: PDF
  • Stock: 960
  • Description: Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(2+Tab) TO-268 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Weight 4.500005g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Series HiPerFAST™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Additional Feature LOW SWITCHING LOSSES
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 180W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*15N120
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 180W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 30A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 3.2V
Turn On Time 43 ns
Test Condition 960V, 15A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 15A
Turn Off Time-Nom (toff) 660 ns
IGBT Type PT
Gate Charge 69nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 25ns/180ns
Switching Energy 1.75mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 320ns
RoHS Status ROHS3 Compliant
See Relate Datesheet