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IXGT16N170A

Trans IGBT Chip N-CH 1.7KV 16A 3-Pin(2+Tab) TO-268


  • Manufacturer: IXYS
  • Origchip NO: 401-IXGT16N170A
  • Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Datasheet: PDF
  • Stock: 574
  • Description: Trans IGBT Chip N-CH 1.7KV 16A 3-Pin(2+Tab) TO-268 (Kg)

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IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Weight 4.500005g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 190W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*16N170
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 190W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.7kV
Max Collector Current 16A
Reverse Recovery Time 230 ns
Collector Emitter Breakdown Voltage 1.7kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Collector Emitter Saturation Voltage 4.2V
Turn On Time 97 ns
Test Condition 850V, 16A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 5V @ 15V, 11A
Turn Off Time-Nom (toff) 330 ns
IGBT Type NPT
Gate Charge 65nC
Current - Collector Pulsed (Icm) 40A
Td (on/off) @ 25°C 36ns/160ns
Switching Energy 900μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 150ns
RoHS Status ROHS3 Compliant
See Relate Datesheet