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IXGT24N170A

Trans IGBT Chip N-CH 1.7KV 25A 3-Pin(2+Tab) TO-268


  • Manufacturer: IXYS
  • Origchip NO: 401-IXGT24N170A
  • Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Datasheet: PDF
  • Stock: 131
  • Description: Trans IGBT Chip N-CH 1.7KV 25A 3-Pin(2+Tab) TO-268 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 80ns
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 24 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Weight 4.500005g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*24N170
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 250W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.7kV
Max Collector Current 24A
Collector Emitter Breakdown Voltage 1.7kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Collector Emitter Saturation Voltage 4.5V
Turn On Time 98 ns
Test Condition 850V, 24A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 6V @ 15V, 16A
Turn Off Time-Nom (toff) 275 ns
IGBT Type NPT
Gate Charge 140nC
Current - Collector Pulsed (Icm) 75A
Td (on/off) @ 25°C 21ns/336ns
Switching Energy 2.97mJ (on), 790μJ (off)
See Relate Datesheet