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IXGT4N250C
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The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 150W |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Reach Compliance Code | unknown |
| Pin Count | 4 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 150W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 6V |
| Max Collector Current | 13A |
| Collector Emitter Breakdown Voltage | 2.5kV |
| Voltage - Collector Emitter Breakdown (Max) | 2500V |
| Test Condition | 1250V, 4A, 20 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 6V @ 15V, 4A |
| Turn Off Time-Nom (toff) | 471 ns |
| IGBT Type | NPT |
| Gate Charge | 57nC |
| Current - Collector Pulsed (Icm) | 46A |
| Td (on/off) @ 25°C | -/350ns |
| Switching Energy | 360μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5V |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 18 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2011 |
| JESD-609 Code | e3 |
See Relate Datesheet