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IXGX28N140B3H1

IGBT Modules 15khz-40khz w/Diode Power Device


  • Manufacturer: IXYS
  • Origchip NO: 401-IXGX28N140B3H1
  • Package: TO-247-3
  • Datasheet: -
  • Stock: 110
  • Description: IGBT Modules 15khz-40khz w/Diode Power Device (Kg)

Purchase & Inquiry

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Means of Payment

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RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Factory Lead Time 20 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
Series GenX3™
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 300W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 300W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.6V
Max Collector Current 60A
Reverse Recovery Time 350 ns
Collector Emitter Breakdown Voltage 1.4kV
Voltage - Collector Emitter Breakdown (Max) 1400V
Turn On Time 66 ns
Test Condition 960V, 28A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 28A
Turn Off Time-Nom (toff) 915 ns
Gate Charge 88nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 16ns/190ns
Switching Energy 3.6mJ (on), 3.9mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
RoHS Status RoHS Compliant
See Relate Datesheet