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IXSX35N120BD1

IGBT 1200V 70A 300W PLUS247


  • Manufacturer: IXYS
  • Origchip NO: 401-IXSX35N120BD1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 635
  • Description: IGBT 1200V 70A 300W PLUS247 (Kg)

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Means of Payment

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RFQ (Request for Quotations)

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Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Reverse Recovery Time 40 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 3.6V
Turn On Time 67 ns
Test Condition 960V, 35A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 35A
Turn Off Time-Nom (toff) 580 ns
IGBT Type PT
Gate Charge 120nC
Current - Collector Pulsed (Icm) 140A
Td (on/off) @ 25°C 36ns/160ns
Switching Energy 5mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
RoHS Status RoHS Compliant
Lead Free Lead Free
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 7.300002g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 300W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXS*35N120
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 300W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 70A
See Relate Datesheet