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  • IXTA08N100P

IXTA08N100P

MOSFET N-CH 1000V 0.8A TO-263


  • Manufacturer: IXYS
  • Origchip NO: 401-IXTA08N100P
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 521
  • Description: MOSFET N-CH 1000V 0.8A TO-263 (Kg)

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Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 240pF @ 25V
Current - Continuous Drain (Id) @ 25°C 800mA Tc
Gate Charge (Qg) (Max) @ Vgs 11.3nC @ 10V
Rise Time 37ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 34 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 800mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.8A
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 1.8A
Avalanche Energy Rating (Eas) 80 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 28 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series Polar™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 42W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 42W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 50μA
See Relate Datesheet