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  • IXTA8N50P

IXTA8N50P

Transistor: N-MOSFET; unipolar; 500V; 8A; 150W; TO263; 400ns


  • Manufacturer: IXYS
  • Origchip NO: 401-IXTA8N50P
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 353
  • Description: Transistor: N-MOSFET; unipolar; 500V; 8A; 150W; TO263; 400ns (Kg)

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Details

Tags

Parameters
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
Series PolarHV™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 8A
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 150W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 150W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 800m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 5.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1050pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 28ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 23 ns
Turn-Off Delay Time 65 ns
Continuous Drain Current (ID) 8A
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 8A
Drain-source On Resistance-Max 0.8Ohm
Drain to Source Breakdown Voltage 500V
Avalanche Energy Rating (Eas) 400 mJ
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet