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IXTH76P10T

MOSFET P-CH 100V 76A TO-247


  • Manufacturer: IXYS
  • Origchip NO: 401-IXTH76P10T
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 346
  • Description: MOSFET P-CH 100V 76A TO-247 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 17 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Series TrenchP™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 298W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 298W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 13700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 76A Tc
Gate Charge (Qg) (Max) @ Vgs 197nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±15V
Continuous Drain Current (ID) 76A
Gate to Source Voltage (Vgs) 15V
Drain-source On Resistance-Max 0.024Ohm
Pulsed Drain Current-Max (IDM) 230A
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet