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IXTK140N20P

IXYS SEMICONDUCTOR IXTK140N20P MOSFET Transistor, PolarFET, N Channel, 140 A, 200 V, 18 mohm, 15 V, 5 V


  • Manufacturer: IXYS
  • Origchip NO: 401-IXTK140N20P
  • Package: TO-264-3, TO-264AA
  • Datasheet: PDF
  • Stock: 209
  • Description: IXYS SEMICONDUCTOR IXTK140N20P MOSFET Transistor, PolarFET, N Channel, 140 A, 200 V, 18 mohm, 15 V, 5 V (Kg)

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Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 7500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 140A Tc
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Rise Time 35ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 90 ns
Turn-Off Delay Time 150 ns
Continuous Drain Current (ID) 140A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 280A
Avalanche Energy Rating (Eas) 4000 mJ
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Series PolarHT™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 18MOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 800W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 800W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 70A, 10V
Vgs(th) (Max) @ Id 5V @ 500μA
See Relate Datesheet