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  • IXTK90N25L2

IXTK90N25L2

IXYS SEMICONDUCTOR IXTK90N25L2 MOSFET Transistor, LINEAR L2, N Channel, 90 A, 250 V, 33 mohm, 10 V, 2 V


  • Manufacturer: IXYS
  • Origchip NO: 401-IXTK90N25L2
  • Package: TO-264-3, TO-264AA
  • Datasheet: PDF
  • Stock: 956
  • Description: IXYS SEMICONDUCTOR IXTK90N25L2 MOSFET Transistor, LINEAR L2, N Channel, 90 A, 250 V, 33 mohm, 10 V, 2 V (Kg)

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Details

Tags

Parameters
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series Linear L2™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 33MOhm
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 960W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 960W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 33m Ω @ 45A, 10V
Vgs(th) (Max) @ Id 4.5V @ 3mA
Input Capacitance (Ciss) (Max) @ Vds 23000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Gate Charge (Qg) (Max) @ Vgs 640nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 90A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 250V
Nominal Vgs 2 V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet