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IXTP4N80P

IXYS SEMICONDUCTOR IXTP4N80P Power MOSFET, N Channel, 4 A, 800 V, 3 ohm, 10 V, 5.5 V


  • Manufacturer: IXYS
  • Origchip NO: 401-IXTP4N80P
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 796
  • Description: IXYS SEMICONDUCTOR IXTP4N80P Power MOSFET, N Channel, 4 A, 800 V, 3 ohm, 10 V, 5.5 V (Kg)

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Details

Tags

Parameters
Factory Lead Time 24 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series PolarHV™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 100W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 100W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.4 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.6A Tc
Gate Charge (Qg) (Max) @ Vgs 14.2nC @ 10V
Rise Time 24ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 29 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 3.6A
Threshold Voltage 5.5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 8A
Avalanche Energy Rating (Eas) 250 mJ
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet