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IXTQ200N10T

MOSFET N-CH 100V 200A TO-3P


  • Manufacturer: IXYS
  • Origchip NO: 401-IXTQ200N10T
  • Package: TO-3P-3, SC-65-3
  • Datasheet: PDF
  • Stock: 352
  • Description: MOSFET N-CH 100V 200A TO-3P (Kg)

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Shipping Cost

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Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.5m Ω @ 50A, 10V
Package / Case TO-3P-3, SC-65-3
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9400pF @ 25V
Number of Pins 3
Current - Continuous Drain (Id) @ 25°C 200A Tc
Gate Charge (Qg) (Max) @ Vgs 152nC @ 10V
Transistor Element Material SILICON
Rise Time 31ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Operating Temperature -55°C~175°C TJ
Vgs (Max) ±30V
Packaging Tube
Fall Time (Typ) 34 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 200A
Drain to Source Breakdown Voltage 100V
Published 2008
Pulsed Drain Current-Max (IDM) 500A
Avalanche Energy Rating (Eas) 1500 mJ
Series TrenchMV™
RoHS Status ROHS3 Compliant
Lead Free Lead Free
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 5.5MOhm
Terminal Finish PURE TIN
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 550W Tc
Element Configuration Single
Factory Lead Time 8 Weeks
Operating Mode ENHANCEMENT MODE
Power Dissipation 550W
Mount Through Hole
Case Connection DRAIN
FET Type N-Channel
Mounting Type Through Hole
See Relate Datesheet