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  • IXTT02N450HV

IXTT02N450HV

MOSFET N-CH 4500V 0.2A TO268


  • Manufacturer: IXYS
  • Origchip NO: 401-IXTT02N450HV
  • Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Datasheet: PDF
  • Stock: 570
  • Description: MOSFET N-CH 4500V 0.2A TO268 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 24 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 113W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 113W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 750 Ω @ 10mA, 10V
Vgs(th) (Max) @ Id 6.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 256pF @ 25V
Current - Continuous Drain (Id) @ 25°C 200mA Tc
Gate Charge (Qg) (Max) @ Vgs 10.4nC @ 10V
Rise Time 48ns
Drain to Source Voltage (Vdss) 4500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 143 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 200mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.2A
Drain-source On Resistance-Max 625Ohm
Drain to Source Breakdown Voltage 4.5kV
Pulsed Drain Current-Max (IDM) 0.6A
RoHS Status ROHS3 Compliant
See Relate Datesheet