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  • IXTT100N25P

IXTT100N25P

MOSFET N-CH 250V 100A TO-268


  • Manufacturer: IXYS
  • Origchip NO: 401-IXTT100N25P
  • Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Datasheet: PDF
  • Stock: 921
  • Description: MOSFET N-CH 250V 100A TO-268 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Peak Reflow Temperature (Cel) NOT SPECIFIED
Gate to Source Voltage (Vgs) 20V
Reach Compliance Code not_compliant
Drain to Source Breakdown Voltage 250V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pulsed Drain Current-Max (IDM) 250A
Pin Count 4
Avalanche Energy Rating (Eas) 2000 mJ
RoHS Status ROHS3 Compliant
JESD-30 Code R-PSSO-G2
Lead Free Lead Free
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 600W Tc
Factory Lead Time 24 Weeks
Element Configuration Single
Mount Surface Mount
Mounting Type Surface Mount
Operating Mode ENHANCEMENT MODE
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material SILICON
Power Dissipation 600W
Case Connection DRAIN
Operating Temperature -55°C~150°C TJ
Packaging Tube
FET Type N-Channel
Published 2006
Transistor Application SWITCHING
Series PolarHT™
Rds On (Max) @ Id, Vgs 24m Ω @ 50A, 10V
JESD-609 Code e3
Pbfree Code yes
Vgs(th) (Max) @ Id 5V @ 250μA
Part Status Active
Input Capacitance (Ciss) (Max) @ Vds 6300pF @ 25V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C 100A Tc
Number of Terminations 2
Gate Charge (Qg) (Max) @ Vgs 185nC @ 10V
ECCN Code EAR99
Rise Time 26ns
Resistance 27MOhm
Drive Voltage (Max Rds On,Min Rds On) 10V
Terminal Finish Matte Tin (Sn)
Vgs (Max) ±20V
Additional Feature AVALANCHE RATED
Fall Time (Typ) 28 ns
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 100A
See Relate Datesheet