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IXTX200N10L2

Trans MOSFET N-CH 100V 200A 3-Pin(3+Tab) ISOPLUS247


  • Manufacturer: IXYS
  • Origchip NO: 401-IXTX200N10L2
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 908
  • Description: Trans MOSFET N-CH 100V 200A 3-Pin(3+Tab) ISOPLUS247 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 247
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Series Linear L2™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
JESD-30 Code R-PSIP-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1040W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.04kW
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4.5V @ 3mA
Input Capacitance (Ciss) (Max) @ Vds 23000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 200A Tc
Gate Charge (Qg) (Max) @ Vgs 540nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 200A
Pulsed Drain Current-Max (IDM) 500A
Avalanche Energy Rating (Eas) 5000 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet