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IXXH50N60B3

IGBT Transistors GenX3 600V XPT IGBTs


  • Manufacturer: IXYS
  • Origchip NO: 401-IXXH50N60B3
  • Package: TO-247-3
  • Datasheet: -
  • Stock: 152
  • Description: IGBT Transistors GenX3 600V XPT IGBTs (Kg)

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IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
Published 2013
Series GenX3™, XPT™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 600W
Terminal Position SINGLE
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Operating Temperature (Max) 175°C
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 600W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 120A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Turn On Time 75 ns
Test Condition 360V, 36A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 36A
Turn Off Time-Nom (toff) 320 ns
IGBT Type PT
Gate Charge 70nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 27ns/100ns
Switching Energy 670μJ (on), 740μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
RoHS Status ROHS3 Compliant
See Relate Datesheet