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IXXK100N60B3H1

IGBT Transistors XPT IGBT B3-Class 600V/190Amp CoPacked


  • Manufacturer: IXYS
  • Origchip NO: 401-IXXK100N60B3H1
  • Package: TO-264-3, TO-264AA Variation
  • Datasheet: PDF
  • Stock: 715
  • Description: IGBT Transistors XPT IGBT B3-Class 600V/190Amp CoPacked (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA Variation
Number of Pins 3
Weight 10.000011g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Series GenX3™, XPT™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 695W
Reach Compliance Code unknown
Base Part Number IXX*N60
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 695W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 200A
Reverse Recovery Time 140 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.8V
Turn On Time 92 ns
Test Condition 360V, 70A, 2 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 70A
Turn Off Time-Nom (toff) 350 ns
IGBT Type PT
Gate Charge 143nC
Current - Collector Pulsed (Icm) 440A
Td (on/off) @ 25°C 30ns/120ns
Switching Energy 1.9mJ (on), 2mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
RoHS Status ROHS3 Compliant
See Relate Datesheet