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IXXK300N60B3

IGBT Transistors XPT 600V IGBT 300A


  • Manufacturer: IXYS
  • Origchip NO: 401-IXXK300N60B3
  • Package: TO-264-3, TO-264AA
  • Datasheet: PDF
  • Stock: 497
  • Description: IGBT Transistors XPT 600V IGBT 300A (Kg)

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Details

Tags

Parameters
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2012
Series GenX3™, XPT™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 2.3kW
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 2300W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 550A
Collector Emitter Breakdown Voltage 600V
Turn On Time 137 ns
Test Condition 400V, 100A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 100A
Turn Off Time-Nom (toff) 430 ns
IGBT Type PT
Gate Charge 460nC
Current - Collector Pulsed (Icm) 1140A
Td (on/off) @ 25°C 50ns/190ns
Switching Energy 3.45mJ (on), 2.86mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
RoHS Status ROHS3 Compliant
See Relate Datesheet