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IXYA8N90C3D1

IGBT Transistors 900V 8A 2.5V XPT IGBTs GenX3 w/ Diode


  • Manufacturer: IXYS
  • Origchip NO: 401-IXYA8N90C3D1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 280
  • Description: IGBT Transistors 900V 8A 2.5V XPT IGBTs GenX3 w/ Diode (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 28 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 1.946308g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2014
Series GenX3™, XPT™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 125W
Reach Compliance Code not_compliant
Element Configuration Single
Input Type Standard
Power - Max 125W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 20A
Reverse Recovery Time 114 ns
Collector Emitter Breakdown Voltage 900V
Collector Emitter Saturation Voltage 2.5V
Test Condition 450V, 8A, 30 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 8A
Gate Charge 13.3nC
Current - Collector Pulsed (Icm) 48A
Td (on/off) @ 25°C 16ns/40ns
Switching Energy 460μJ (on), 180μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
RoHS Status ROHS3 Compliant
See Relate Datesheet