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IXYH24N90C3D1

IGBT Transistors 900V 24A 2.7V XPT IGBTs GenX3 w/ Diode


  • Manufacturer: IXYS
  • Origchip NO: 401-IXYH24N90C3D1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 844
  • Description: IGBT Transistors 900V 24A 2.7V XPT IGBTs GenX3 w/ Diode (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series GenX3™, XPT™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 200W
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 200W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.7V
Max Collector Current 44A
Reverse Recovery Time 340 ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 900V
Collector Emitter Saturation Voltage 2.7V
Turn On Time 60 ns
Test Condition 450V, 24A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 24A
Turn Off Time-Nom (toff) 215 ns
Gate Charge 40nC
Current - Collector Pulsed (Icm) 105A
Td (on/off) @ 25°C 20ns/73ns
Switching Energy 1.35mJ (on), 400μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
RoHS Status ROHS3 Compliant
See Relate Datesheet