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  • IXYH30N120C3

IXYH30N120C3

Trans IGBT Chip N-CH 1.2KV 75A 3-Pin(3+Tab) TO-247


  • Manufacturer: IXYS
  • Origchip NO: 401-IXYH30N120C3
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 787
  • Description: Trans IGBT Chip N-CH 1.2KV 75A 3-Pin(3+Tab) TO-247 (Kg)

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Shipping Cost

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Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 3.7V
Turn On Time 71 ns
Test Condition 600V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.3V @ 15V, 30A
Turn Off Time-Nom (toff) 296 ns
Gate Charge 69nC
Current - Collector Pulsed (Icm) 145A
Td (on/off) @ 25°C 19ns/130ns
Switching Energy 2.6mJ (on), 1.1mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Height 21.46mm
Length 16.26mm
Width 5.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series GenX3™, XPT™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 500W
Number of Elements 1
Element Configuration Single
Power Dissipation 500W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Drain to Source Voltage (Vdss) 1.2kV
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 75A
See Relate Datesheet