English

All Products

View All >>
  • IXYH30N120C3D1

IXYH30N120C3D1

IGBT Transistors XPT 1200V IGBT GenX4 XPT IGBT


  • Manufacturer: IXYS
  • Origchip NO: 401-IXYH30N120C3D1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 910
  • Description: IGBT Transistors XPT 1200V IGBT GenX4 XPT IGBT (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Series GenX3™, XPT™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 416W
Number of Elements 1
Element Configuration Single
Power Dissipation 416W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 23 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 126 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 66A
Reverse Recovery Time 195ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 3.7V
Turn On Time 71 ns
Test Condition 600V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.3V @ 15V, 30A
Turn Off Time-Nom (toff) 296 ns
Gate Charge 69nC
Current - Collector Pulsed (Icm) 133A
Td (on/off) @ 25°C 19ns/130ns
Switching Energy 2.6mJ (on), 1.1mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Height 21.46mm
Length 16.26mm
Width 5.3mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet