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IXYH40N120C3D1

IGBT Transistors XPT 1200V IGBT GenX5 XPT IGBT


  • Manufacturer: IXYS
  • Origchip NO: 401-IXYH40N120C3D1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 172
  • Description: IGBT Transistors XPT 1200V IGBT GenX5 XPT IGBT (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series GenX3™, XPT™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 480W
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 480W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 24 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 125 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 64A
Reverse Recovery Time 195ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 4.8V
Turn On Time 99 ns
Test Condition 600V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 4V @ 15V, 40A
Turn Off Time-Nom (toff) 178 ns
Gate Charge 85nC
Current - Collector Pulsed (Icm) 105A
Td (on/off) @ 25°C 24ns/125ns
Switching Energy 3.9mJ (on), 660μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Height 21.46mm
Length 16.26mm
Width 5.3mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet