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  • IXYX100N120C3

IXYX100N120C3

IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT


  • Manufacturer: IXYS
  • Origchip NO: 401-IXYX100N120C3
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 401
  • Description: IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 247
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
Series GenX3™, XPT™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 1.15kW
Reach Compliance Code unknown
Pin Count 3
JESD-30 Code R-PSIP-T3
Number of Elements 1
Element Configuration Single
Power Dissipation 1.15kW
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 32 ns
Power - Max 1150W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 123 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 188A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.9V
Turn On Time 122 ns
Test Condition 600V, 100A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 100A
Turn Off Time-Nom (toff) 265 ns
Gate Charge 270nC
Current - Collector Pulsed (Icm) 490A
Td (on/off) @ 25°C 32ns/123ns
Switching Energy 6.5mJ (on), 2.9mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Height 21.34mm
Length 16.13mm
Width 5.21mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet