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IXYY8N90C3

IGBT Transistors 900V 8A 2.5V XPT IGBTs GenX3


  • Manufacturer: IXYS
  • Origchip NO: 401-IXYY8N90C3
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 731
  • Description: IGBT Transistors 900V 8A 2.5V XPT IGBTs GenX3 (Kg)

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Details

Tags

Parameters
Factory Lead Time 24 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 3.949996g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2014
Series GenX3™, XPT™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Additional Feature AVALANCHE RATED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 125W
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 125W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 20A
JEDEC-95 Code TO-252AA
Collector Emitter Breakdown Voltage 900V
Collector Emitter Saturation Voltage 2.5V
Turn On Time 39 ns
Test Condition 450V, 8A, 30 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 8A
Turn Off Time-Nom (toff) 238 ns
Gate Charge 13.3nC
Current - Collector Pulsed (Icm) 48A
Td (on/off) @ 25°C 16ns/40ns
Switching Energy 460μJ (on), 180μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
RoHS Status ROHS3 Compliant
See Relate Datesheet