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IXZ308N120

IXYS RF IXZ308N120 RF FET Transistor, 1.2 kV, 8 A, 880 W, DE-375


  • Manufacturer: IXYS-RF
  • Origchip NO: 392-IXZ308N120
  • Package: 6-SMD, Flat Lead Exposed Pad
  • Datasheet: PDF
  • Stock: 879
  • Description: IXYS RF IXZ308N120 RF FET Transistor, 1.2 kV, 8 A, 880 W, DE-375 (Kg)

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Details

Tags

Parameters
Factory Lead Time 10 Weeks
Package / Case 6-SMD, Flat Lead Exposed Pad
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Packaging Tube
Published 2004
Series Z-MOS™
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Max Operating Temperature 175°C
Voltage - Rated 1200V
Max Power Dissipation 880W
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 65MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Transistor Application SWITCHING
Rise Time 5ns
Drain to Source Voltage (Vdss) 1.2kV
Transistor Type N-Channel
Continuous Drain Current (ID) 8A
Gain 23dB
Drain Current-Max (Abs) (ID) 8A
DS Breakdown Voltage-Min 1200V
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance 2.1Ohm
Voltage - Test 100V
REACH SVHC No SVHC
RoHS Status RoHS Compliant
See Relate Datesheet