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JAN2N918

JAN2N918 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-JAN2N918
  • Package: TO-72-3 Metal Can
  • Datasheet: PDF
  • Stock: 287
  • Description: JAN2N918 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi (Kg)

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Details

Tags

Parameters
Vce Saturation (Max) @ Ib, Ic 400mV @ 1mA, 10mA
Current - Collector (Ic) (Max) 50mA
Collector Base Voltage (VCBO) 30V
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 3pF
RoHS Status Non-RoHS Compliant
Factory Lead Time 23 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-72-3 Metal Can
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/301
JESD-609 Code e0
Pbfree Code no
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.21.00.95
Max Power Dissipation 200mW
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Reference Standard MIL-19500/301H
JESD-30 Code O-MBCY-W4
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 3mA 1V
Current - Collector Cutoff (Max) 1μA ICBO
See Relate Datesheet