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JANTX2N6764

MOSFET N-CH TO-204AE TO-3


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-JANTX2N6764
  • Package: TO-204AE
  • Datasheet: PDF
  • Stock: 654
  • Description: MOSFET N-CH TO-204AE TO-3 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Contact Plating Lead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-204AE
Number of Pins 2
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1997
Series Military, MIL-PRF-19500/543
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form PIN/PEG
Reach Compliance Code not_compliant
Pin Count 2
Reference Standard MIL-19500/543G
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 4W Ta 150W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 65m Ω @ 38A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 38A Tc
Gate Charge (Qg) (Max) @ Vgs 125nC @ 10V
Rise Time 190ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 38A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.055Ohm
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 150 mJ
RoHS Status Non-RoHS Compliant
See Relate Datesheet