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JANTXV2N2907A

JANTXV2N2907A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-JANTXV2N2907A
  • Package: TO-206AA, TO-18-3 Metal Can
  • Datasheet: PDF
  • Stock: 819
  • Description: JANTXV2N2907A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi (Kg)

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Details

Tags

Parameters
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Factory Lead Time 8 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Number of Pins 3
Supplier Device Package TO-18
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2002
Series Military, MIL-PRF-19500/291
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Max Power Dissipation 500mW
Number of Elements 1
Polarity PNP
Power Dissipation 500mW
Power - Max 500mW
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 50nA
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Collector Emitter Breakdown Voltage 60V
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 600mA
See Relate Datesheet