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JANTXV2N6301

JANTXV2N6301 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-JANTXV2N6301
  • Package: TO-213AA, TO-66-2
  • Datasheet: PDF
  • Stock: 658
  • Description: JANTXV2N6301 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 20 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Contact Plating Lead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-213AA, TO-66-2
Transistor Element Material SILICON
Operating Temperature -55°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/539
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Position BOTTOM
Terminal Form PIN/PEG
Pin Count 3
JESD-30 Code O-MBFM-P2
Qualification Status Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Case Connection COLLECTOR
Power - Max 75W
Transistor Application SWITCHING
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 4A 3V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 3V @ 80mA, 8A
Transition Frequency 4MHz
Collector Emitter Saturation Voltage 2V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
See Relate Datesheet