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JANTXV2N6352

JANTXV2N6352 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-JANTXV2N6352
  • Package: TO-213AA, TO-66-2
  • Datasheet: PDF
  • Stock: 637
  • Description: JANTXV2N6352 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 36 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 4 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-213AA, TO-66-2
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/472
JESD-609 Code e0
Pbfree Code no
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 4
JESD-30 Code O-MBCY-W3
Qualification Status Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Case Connection COLLECTOR
Power - Max 2W
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 80V
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 5A 5V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 5mA, 5A
Current - Collector (Ic) (Max) 5A
Transition Frequency 50MHz
Collector Emitter Saturation Voltage 1.5V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 12V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
See Relate Datesheet