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JANTXV2N6756

MOSFET N-CH 100V 14A


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-JANTXV2N6756
  • Package: TO-204AA, TO-3
  • Datasheet: PDF
  • Stock: 651
  • Description: MOSFET N-CH 100V 14A (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1997
Series Military, MIL-PRF-19500/542
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature RADIATION HARDENED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
Reference Standard MIL-19500/542
JESD-30 Code O-MBFM-P2
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation-Max 4W Ta 75W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 210m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 14A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 14A
Drain-source On Resistance-Max 0.18Ohm
Pulsed Drain Current-Max (IDM) 30A
DS Breakdown Voltage-Min 100V
RoHS Status Non-RoHS Compliant
See Relate Datesheet