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KSB1116SYTA

KSB1116SYTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-KSB1116SYTA
  • Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Datasheet: PDF
  • Stock: 110
  • Description: KSB1116SYTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSB1116
Power - Max 750mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 135 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 120MHz
See Relate Datesheet