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  • KSE2955T

KSE2955T

KSE2955T datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-KSE2955T
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 633
  • Description: KSE2955T datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Current Rating -10A
Frequency 2MHz
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 600mW
Power - Max 600mW
Gain Bandwidth Product 2MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 8V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 4V
Current - Collector Cutoff (Max) 700μA
Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A
Collector Emitter Breakdown Voltage 60V
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 10A
Frequency - Transition 2MHz
Collector Base Voltage (VCBO) -70V
Emitter Base Voltage (VEBO) -5V
hFE Min 20
RoHS Status RoHS Compliant
Lead Free Lead Free
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Bulk
Published 2001
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -60V
Max Power Dissipation 600mW
See Relate Datesheet