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LET20030C

Trans RF MOSFET N-CH 80V 9A 3-Pin Case M-243


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-LET20030C
  • Package: M243
  • Datasheet: -
  • Stock: 385
  • Description: Trans RF MOSFET N-CH 80V 9A 3-Pin Case M-243 (Kg)

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RFQ (Request for Quotations)

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Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Screw
Package / Case M243
Number of Pins 3
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Subcategory FET General Purpose Power
Max Power Dissipation 108W
Terminal Position DUAL
Terminal Form FLAT
Current Rating 9A
Frequency 2GHz
Base Part Number LET20030
Pin Count 2
JESD-30 Code R-PDFM-F2
Number of Elements 1
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 400mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 75V
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Continuous Drain Current (ID) 9A
Gate to Source Voltage (Vgs) 80V
Drain Current-Max (Abs) (ID) 4A
DS Breakdown Voltage-Min 65V
Power - Output 45W
FET Technology METAL-OXIDE SEMICONDUCTOR
Noise Figure 13.9 dB
Voltage - Test 28V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet