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LND250K1-G

MOSFET 500V 1KOhm


  • Manufacturer: Microchip Technology
  • Origchip NO: 536-LND250K1-G
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 504
  • Description: MOSFET 500V 1KOhm (Kg)

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FedEx International, 5-7 business days.

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Details

Tags

Parameters
Packaging Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C 13mA Tj
Rise Time 450ns
Drive Voltage (Max Rds On,Min Rds On) 0V
Published 2014
Vgs (Max) ±20V
Fall Time (Typ) 450 ns
JESD-609 Code e3
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 13mA
Part Status Active
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 500V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET Feature Depletion Mode
Height 950μm
Length 2.9mm
Number of Terminations 3
Width 1.3mm
RoHS Status ROHS3 Compliant
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Additional Feature HIGH INPUT IMPEDANCE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Factory Lead Time 6 Weeks
Mount Surface Mount
Number of Channels 1
Power Dissipation-Max 360mW Ta
Mounting Type Surface Mount
Element Configuration Single
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Power Dissipation 360mW
Turn On Delay Time 90 ns
Weight 1.437803g
FET Type N-Channel
Transistor Element Material SILICON
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1000 Ω @ 500μA, 0V
Operating Temperature -55°C~150°C TJ
Input Capacitance (Ciss) (Max) @ Vds 10pF @ 25V
See Relate Datesheet