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MBR600200CT

MBR600200CT datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available at Feilidi


  • Manufacturer: GeneSiC Semiconductor
  • Origchip NO: 347-MBR600200CT
  • Package: Twin Tower
  • Datasheet: PDF
  • Stock: 637
  • Description: MBR600200CT datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 6 Weeks
Lifecycle Status PRODUCTION (Last Updated: 5 months ago)
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Twin Tower
Diode Element Material SILICON
Packaging Bulk
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
HTS Code 8541.10.00.80
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-PUFM-X2
Operating Temperature (Max) 150°C
Number of Elements 2
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 3mA @ 200V
Voltage - Forward (Vf) (Max) @ If 920mV @ 300A
Operating Temperature - Junction -55°C~150°C
Application POWER
Max Reverse Voltage (DC) 200V
Average Rectified Current 300A
Number of Phases 1
Non-rep Pk Forward Current-Max 4000A
Diode Configuration 1 Pair Common Cathode
Reverse Current-Max 3000μA
RoHS Status RoHS Compliant
See Relate Datesheet