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MBT35200MT2G

MBT35200MT2G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-MBT35200MT2G
  • Package: SOT-23-6
  • Datasheet: -
  • Stock: 495
  • Description: MBT35200MT2G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Packaging Tape & Reel (TR)
Published 2005
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 1W
Base Part Number MBT35200
Element Configuration Single
Power - Max 625mW
Gain Bandwidth Product 100MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 35V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1.5A 1.5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 310mV @ 20mA, 2A
Collector Emitter Breakdown Voltage 35V
Current - Collector (Ic) (Max) 2A
Collector Base Voltage (VCBO) 55V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet