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MCH6342-TL-W

MOSFET P-CH 30V 4.5A MCPH6


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-MCH6342-TL-W
  • Package: 6-SMD, Flat Leads
  • Datasheet: PDF
  • Stock: 641
  • Description: MOSFET P-CH 30V 4.5A MCPH6 (Kg)

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Details

Tags

Parameters
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±10V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 4.5A
Threshold Voltage -1.3V
Gate to Source Voltage (Vgs) 10V
Drain-source On Resistance-Max 0.073Ohm
Pulsed Drain Current-Max (IDM) 18A
DS Breakdown Voltage-Min 30V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Number of Pins 88
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2012
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Finish Tin/Bismuth (Sn/Bi)
Additional Feature ESD PROTECTED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Reach Compliance Code not_compliant
JESD-30 Code R-XDSO-F6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.5W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 8.2 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 73m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 650pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4.5A Ta
Gate Charge (Qg) (Max) @ Vgs 8.6nC @ 4.5V
Rise Time 28ns
Drain to Source Voltage (Vdss) 30V
See Relate Datesheet