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MGSF1N02LT1G

MGSF1N02LT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-MGSF1N02LT1G
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 656
  • Description: MGSF1N02LT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
JESD-609 Code e3
Drain Current-Max (Abs) (ID) 0.75A
Drain to Source Breakdown Voltage 20V
Pbfree Code yes
Nominal Vgs 1.7 V
Height 1.01mm
Part Status Active
Length 3.04mm
Width 1.4mm
Radiation Hardening No
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH SVHC No SVHC
Number of Terminations 3
RoHS Status ROHS3 Compliant
Lead Free Lead Free
ECCN Code EAR99
Resistance 90MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Powers
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 750mA
Pin Count 3
Number of Elements 1
Power Dissipation-Max 400mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 400mW
Turn On Delay Time 2.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 90m Ω @ 1.2A, 10V
Factory Lead Time 11 Weeks
Vgs(th) (Max) @ Id 2.4V @ 250μA
Lifecycle Status ACTIVE (Last Updated: 6 hours ago)
Input Capacitance (Ciss) (Max) @ Vds 125pF @ 5V
Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 750mA Ta
Package / Case TO-236-3, SC-59, SOT-23-3
Rise Time 1ns
Surface Mount YES
Number of Pins 3
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Transistor Element Material SILICON
Fall Time (Typ) 1 ns
Operating Temperature -55°C~150°C TJ
Turn-Off Delay Time 16 ns
Packaging Tape & Reel (TR)
Continuous Drain Current (ID) 750mA
Threshold Voltage 1.7V
Published 2005
Gate to Source Voltage (Vgs) 20V
See Relate Datesheet