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MICROFJ-40035-TSV-TR1

MICROFJ-40035-TSV-TR1 datasheet pdf and Optical Sensors - Photodiodes product details from ON Semiconductor stock available at Utmel


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-MICROFJ-40035-TSV-TR1
  • Package: 14-WBGA
  • Datasheet: PDF
  • Stock: 723
  • Description: MICROFJ-40035-TSV-TR1 datasheet pdf and Optical Sensors - Photodiodes product details from ON Semiconductor stock available at Utmel(Kg)

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Details

Tags

Parameters
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case 14-WBGA
Shape SQUARE
Operating Temperature -40°C~85°C
Series J-SERIES SIPM
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 4 (72 Hours)
Number of Functions 1
Configuration COMPLEX
Diode Type Avalanche
Response Time 110ps
Voltage - DC Reverse (Vr) (Max) 24.7V
Size 3.93mm
Wavelength 420nm
Dark Current-Max 4000nA
Spectral Range 200nm ~ 900nm
Active Area 15.45mm2
Infrared Range NO
Current - Dark (Typ) 3μA
Reverse Breakdown Voltage-Min 24.2V
RoHS Status ROHS3 Compliant

MICROFJ-40035-TSV-TR1 Overview


Photodiodes are packaged in 14-WBGA packages in order to ensure their safety. As long as the photodiodes are operated continuously in reverse-bias mode, the maximum voltage they can tolerate is 24.7V.

MICROFJ-40035-TSV-TR1 Features


Moisture Sensitivity Level (MSL): 4 (72 Hours)
Operating Temperature: -40°C~85°C
Diode Type: Avalanche
Spectral Range: 200nm ~ 900nm
Response Time: 110ps

MICROFJ-40035-TSV-TR1 Applications


There are a lot of ON Semiconductor MICROFJ-40035-TSV-TR1 Photodiodes applications.

  • High speed photo detectors
  • YAG laser detection
  • Photo interrupters
  • Optical Analytics
  • Machine Controls
  • Electronic Equipment
  • Diode Laser Monitoring
  • Range finding
  • High speed photo detector
  • Light Barriers