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MID550-12A4

MOD IGBT RBSOA 1200V 670A Y3-DCB


  • Manufacturer: IXYS
  • Origchip NO: 401-MID550-12A4
  • Package: Y3-DCB
  • Datasheet: PDF
  • Stock: 149
  • Description: MOD IGBT RBSOA 1200V 670A Y3-DCB (Kg)

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Purchase

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Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Factory Lead Time 28 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case Y3-DCB
Number of Pins 10
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
Published 2000
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 2.75kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Base Part Number MID
Pin Count 7
JESD-30 Code R-XUFM-X5
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Turn On Delay Time 100 ns
Power - Max 2750W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Turn-Off Delay Time 600 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 670A
Current - Collector Cutoff (Max) 21mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.3V
Input Capacitance 26nF
Turn On Time 160 ns
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 400A
Turn Off Time-Nom (toff) 690 ns
IGBT Type NPT
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 26nF @ 25V
VCEsat-Max 2.8 V
Height 30mm
Length 110mm
Width 62mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet