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MIEB101W1200EH

IGBT MODULE 1200V 183A 630W E3


  • Manufacturer: IXYS
  • Origchip NO: 401-MIEB101W1200EH
  • Package: E3
  • Datasheet: PDF
  • Stock: 535
  • Description: IGBT MODULE 1200V 183A 630W E3 (Kg)

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case E3
Transistor Element Material SILICON
Operating Temperature -40°C~125°C TJ
Packaging Bulk
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 19
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 630W
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-XUFM-X19
Number of Elements 6
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 630W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 183A
Current - Collector Cutoff (Max) 300μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 7.43nF
Turn On Time 175 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 100A
Turn Off Time-Nom (toff) 700 ns
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 7.43nF @ 25V
RoHS Status ROHS3 Compliant
See Relate Datesheet