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MIXA60W1200TED

IGBT MODULE 1200V 85A 290W E2


  • Manufacturer: IXYS
  • Origchip NO: 401-MIXA60W1200TED
  • Package: E2
  • Datasheet: PDF
  • Stock: 333
  • Description: IGBT MODULE 1200V 85A 290W E2 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 20 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case E2
Transistor Element Material SILICON
Operating Temperature -40°C~125°C TJ
Packaging Bulk
Published 2010
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 28
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 290W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 28
JESD-30 Code R-XUFM-X28
Qualification Status Not Qualified
Number of Elements 6
Configuration Three Phase Inverter with Brake
Case Connection ISOLATED
Power - Max 290W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 85A
Current - Collector Cutoff (Max) 500μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 110 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 55A
Turn Off Time-Nom (toff) 350 ns
IGBT Type PT
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
RoHS Status ROHS3 Compliant
See Relate Datesheet