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MJD2955T4G

MJD2955T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-MJD2955T4G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 388
  • Description: MJD2955T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Surface Mount YES
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation 1.75W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -10A
Frequency 2MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MJD2955
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 20W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product 2MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 4V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 2MHz
Collector Emitter Saturation Voltage 1.1V
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 70V
Emitter Base Voltage (VEBO) 5V
hFE Min 20
Max Junction Temperature (Tj) 150°C
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 22 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
See Relate Datesheet