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  • MJD50T4G

MJD50T4G

MJD50T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-MJD50T4G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 278
  • Description: MJD50T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 10MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300mA 10V
Current - Collector Cutoff (Max) 200μA
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 1A
Collector Emitter Breakdown Voltage 400V
Transition Frequency 10MHz
Collector Emitter Saturation Voltage 1V
Max Breakdown Voltage 400V
Collector Base Voltage (VCBO) 500V
Emitter Base Voltage (VEBO) 5V
hFE Min 30
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 19 hours ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Cut Tape (CT)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 400V
Max Power Dissipation 1.56W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 1A
Frequency 10MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MJD50
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 1.56W
See Relate Datesheet