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MJD5731T4

MJD5731T4 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-MJD5731T4
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 380
  • Description: MJD5731T4 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Lifecycle Status OBSOLETE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Voltage - Rated DC -350V
Max Power Dissipation 1.56W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 1A
Frequency 10MHz
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number MJD5731
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 1.56W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 10MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 350V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300mA 10V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 1A
Collector Emitter Breakdown Voltage 350V
Transition Frequency 10MHz
Collector Emitter Saturation Voltage 1V
Collector Base Voltage (VCBO) 5V
Emitter Base Voltage (VEBO) 5V
hFE Min 30
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
See Relate Datesheet